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BTS3410G, N channel vertical power FET in Smart SIPMOS technology. Fully protected. 42 V, 1.3 A, 190 m?

N channel vertical power FET in Smart SIPMOS technology. Fully protected. 42 V, 1.3 A, 190 m?

SKU:BTS3410G
Корпус

SOIC8

Тип упаковки

Tape and Reel (лента в катушке)

Нормоупаковка

2500 шт

Вес брутто

0.1 г

 

 

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